IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage
(4,5)
71V30X25
Com'l Only
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
t
DH
t
WZ
t
OW
Write Cycle Time
Chip Enable to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1,2)
Data Hold Time
(3)
Write Enable to Output in High-Z
(1,2)
Output Active from End-of-Write
(1,2,3)
25
20
20
0
20
0
12
____
____
71V30X35
Com'l Only
Min.
Max.
71V30X55
Com'l Only
Min.
Max.
Unit
Parameter
Min.
Max.
35
30
30
0
30
0
20
____
____
55
40
40
0
40
0
20
____
____
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3741 tbl 10
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
12
____
15
____
30
____
0
____
0
____
0
____
15
____
15
____
30
____
0
0
0
NOTES:
1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. The specification for t
DH
must be met by the device supplying write data to the SRAM under all operating conditions. Although t
DH
and t
OW
values will vary over voltage and
temperature, the actual t
DH
will always be smaller than the actual t
OW
.
4. 'X' in part number indicates power rating (S or L).
5. Industrial temperatures: for specific speeds, packages and powers contact your sales office.
7
6.42
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
