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IDT71V632S6PF 参数 Datasheet PDF下载

IDT71V632S6PF图片预览
型号: IDT71V632S6PF
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×32的3.3V同步SRAM流水线突发输出计数器,单周期取消 [64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect]
分类和应用: 计数器存储内存集成电路静态存储器时钟
文件页数/大小: 19 页 / 274 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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64K x 32
3.3V Synchronous SRAM
Pipelined Outputs
Burst Counter, Single Cycle Deselect
Features
x
x
IDT71V632
x
x
x
x
x
x
64K x 32 memory configuration
Supports high system speed:
Commercial:
– A4 4.5ns clock access time (117 MHz)
Commercial and Industrial:
– 5 5ns clock access time (100 MHz)
– 6 6ns clock access time (83 MHz)
– 7 7ns clock access time (66 MHz)
Single-cycle deselect functionality (Compatible with
Micron Part # MT58LC64K32D7LG-XX)
LBO
input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW), byte
write enable (BWE), and byte writes (BWx)
Power down controlled by ZZ input
Operates with a single 3.3V power supply (+10/-5%)
Packaged in a JEDEC Standard 100-pin rectangular plastic
thin quad flatpack (TQFP).
Description
The IDT71V632 is a 3.3V high-speed SRAM organized as 64K x 32
with full support of the Pentium™ and PowerPC™ processor interfaces.
The pipelined burst architecture provides cost-effective 3-1-1-1 second-
ary cache performance for processors up to 117MHz.
The IDT71V632 SRAM contains write, data, address, and control
registers. Internal logic allows the SRAM to generate a self-timed write
based upon a decision which can be left until the extreme end of the write
cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V632 can provide four cycles of data for
a single address presented to the SRAM. An internal burst address counter
accepts the first cycle address from the processor, initiating the access
sequence. The first cycle of output data will be pipelined for one cycle before
it is available on the next rising clock edge. If burst mode operation is
selected (ADV=LOW), the subsequent three cycles of output data will be
available to the user on the next three rising clock edges. The order of these
three addresses will be defined by the internal burst counter and the
LBO
input pin.
The IDT71V632 SRAM utilizes IDT's high-performance, high-volume
3.3V CMOS process, and is packaged in a JEDEC Standard 14mm x
20mm 100-pin thin plastic quad flatpack (TQFP) for optimum board density
in both desktop and notebook applications.
Pin Description Summary
A
0
–A
15
CE
CS
0
,
CS
1
OE
GW
BWE
BW
1,
BW
2,
BW
3,
BW
4
CLK
ADV
ADSC
ADSP
LBO
ZZ
I/O
0
–I/O
31
V
DD
, V
DDQ
V
SS
, V
SSQ
Address Inputs
Chip Enable
Chips Selects
Output Enable
Global Write Enable
Byte Write Enable
Individual Byte Write Selects
Clock
Burst Address Advance
Address Status (Cache Controller)
Address Status (Processor)
Linear / Interleaved Burst Order
Sleep Mode
Data Input/Output
3.3V
Array Ground, I/O Ground
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
I/O
Power
Power
Synchronous
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Synchronous
Synchronous
DC
Asynchronous
Synchronous
N/A
N/A
3619 tbl 01
Pentium processor is a trademark of Intel Corp.
PowerPC is a trademark of International Business Machines, Inc.
AUGUST 2001
1
DSC-3619/04
©2000 Integrated Device Technology, Inc.