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IDT71V428S12Y 参数 Datasheet PDF下载

IDT71V428S12Y图片预览
型号: IDT71V428S12Y
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V CMOS静态RAM 4 MEG ( 1M ×4位) [3.3V CMOS STATIC RAM 4 MEG (1M x 4-BIT)]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 77 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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3.3V CMOS Static RAM
4 Meg (1M x 4-Bit)
IDT71V428S
IDT71V428L
Features
Description
The IDT71V428 is a 4,194,304-bit high-speed Static RAM orga-
nized as 1M x 4. It is fabricated using IDT’s high-perfomance, high-
reliability CMOS technology. This state-of-the-art technology, com-
bined with innovative circuit design techniques, provides a cost-
effective solution for high-speed memory needs.
The IDT71V428 has an output enable pin which operates as fast as
5ns, with address access times as fast as 10ns. All bidirectional inputs
and outputs of the IDT71V428 are LVTTL-compatible and operation is
from a single 3.3V supply. Fully static asynchronous circuitry is used,
requiring no clocks or refresh for operation.
The IDT71V428 is packaged in a 32-pin, 400 mil Plastic SOJ.
1M x 4 advanced high-speed CMOS Static RAM
JEDEC Center Power / GND pinout for reduced noise
Equal access and cycle times
— Commercial and Industrial: 10/12/15ns
Single 3.3V power supply
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
LVTTL-compatible
Low power consumption via chip deselect
Available in 32-pin, 400 mil plastic SOJ package.
Functional Block Diagram
A
0
A
19
ADDRESS
DECODER
4,194,304-BIT
MEMORY ARRAY
I/O
0
– I/O
3
4
4
I/O CONTROL
4
WE
OE
CS
CONTROL
LOGIC
3623 drw 01
SEPTEMBER 2004
1
©2004 Integrated Device Technology, Inc.
DSC-3623/06