IL78XX
IL7810 ELECTRICAL CHARACTERISTICS
(Refer to test circuit, Tmin<Tj<Tmax, Io=500mA, VI=16V, Ci=0.33
㎌,
Co=0.1
㎌,
unless otherwise sprcified)
Characteristic
Symbol
Test condition
Tj = 25° C
Output Voltage
Vo
5.0mA
≤Io ≤1.0A,
PD
≤15W
VI = 12.5V to 25V
VI = 13.5V to 25V
Tj =
25° C
Tj =
25° C
VI = 12.5V to 25V
VI = 13V to 25V
Io = 5.0mA to 1.5A
Io = 250mA to 750mA
Tj = 25° C
Io = 5mA to 1A
Quiescent current
Change
Output voltage Drift
Output noise voltage
Ripple Rejection
Dropout voltage
Peak current
Output Resistance
Short circuit current
∆Iq
VI = 12.5V to 29V
VI = 13.5V to 29V
∆
Vo/
∆
T
Vn
RR
Vd
Ipk
Ro
Isc
Io = 5mA
f = 10Hz to 100KHz, Ta = 25° C
f = 120Hz, VI = 13V to 23V
Io = 1A, Tj = 25° C
Tj = 25° C
f = 1KHz
Vi = 35V, Ta = 25° C
56
-1
58
71
2
2.2
17
250
mA
mV/° C
㎶
dB
V
A
Min.
9.6
Typ.
10.0
Max.
10.4
V
Unit
9.5
10.0
10.5
Line Regulation
∆Vo
10
3
12
4
5.1
200
100
200
400
8
0.5
1
mA
mA
mV
Load Regulation
Quiescent current
∆Vo
Iq
* Load and lone regulation are specified at constant junction temperature. Changes in Vo due to heating effects
must be taken into account separately. Pulse testing with low duty is used.
Rev. 02
IKSEMICON [ IK SEMICON CO., LTD ]
