IL78LXX
IL78L18 ELECTRICAL CHARACTERISTICS
(At specified virtual junction temperature, V
l
=23V, l
o
=40mA (unless otherwise noted)
Characteistic
Symbol
Test condition *
Min
Typ.
Max.
Unit
25
℃
17.3
18
18.7
Output voltage **
Vout
1
㎃≤
Io
≤
40
㎃
20.5V
≤
VI
≤
33V
-40 ~ 125
℃
1
㎃≤
Io
≤
70
㎃
17.1
18
18.9
V
17.1
18
18.9
20.5
≤
VI
≤
33V
Line regulation
Reg line
22
≤
VI
≤
33V
25
℃
70
360
㎷
64
300
1
㎃≤
Io
≤
100
㎃
Load regulation
Reg load
1
㎃≤
Io
≤
40
㎃
25
℃
27
180
㎷
19
90
25
℃
Bias current
I
B
125
℃
4.7
6.5
㎃
6
22
≤
VI
≤
33V
Bias current change
△
I
B
1
㎃≤
Io
≤
40
㎃
-40 ~ 125
℃
1.5
㎃
0.1
Output noise voltage
V
N
10
㎐≤
f
≤
100
㎑
25
℃
82
㎶
Ripple rejection
RR
21.5
≤
VI
≤
31.5V
f=120
㎐
25
℃
32
36
dB
Dropout voltage
V
D
25
℃
1.7
V
Notes
*.
Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as
possible.
Thermal effects must be taken into account separately.
All characteristics are measured with a 0.33㎌ capacitor across the input and a 0.1㎌ capacitor across the output.
**. This specification applies only for DC power dissipation permitted by absolute maximum ratings.
Rev. 01
IKSEMICON [ IK SEMICON CO., LTD ]
