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IN74HC165AN 参数 Datasheet PDF下载

IN74HC165AN图片预览
型号: IN74HC165AN
PDF下载: 下载PDF文件 查看货源
内容描述: 8位串行或并行输入/串行输出移位寄存器高性能硅栅CMOS [8-Bit Serial or Parallel-Input/ Serial-Output Shift Register High-Performance Silicon-Gate CMOS]
分类和应用: 移位寄存器
文件页数/大小: 8 页 / 356 K
品牌: IKSEMICON [ IK SEMICON CO., LTD ]
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IN74HC165A
AC ELECTRICAL CHARACTERISTICS
(C
L
=50pF,Input t
r
=t
f
=6.0 ns)
V
CC
Symbol
Parameter
V
Guaranteed Limit
25
°C
to
-55°C
6.0
30
35
150
30
26
175
35
30
150
30
26
75
15
13
10
≤85°C
≤125°C
Unit
f
max
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 8)
Maximum Propagation Delay, Clock (or Clock
Inhibit) to Q
H
or Q
H
(Figures 1 and 8)
Maximum Propagation Delay ,
SerialShift./.Parallel Load to Q
H
or Q
H
(Figures 2 and 8)
Maximum Propagation Delay, Input H to Q
H
or
Q
H
(Figures 3 and 8)
Maximum Output Transition Time, Any Output
(Figures 1 and 8)
Maximum Input Capacitance
Power Dissipation Capacitance (Per Package)
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
-
4.8
24
28
190
38
33
220
44
37
190
38
33
95
19
16
10
4.0
20
24
225
45
38
265
53
45
225
45
38
110
22
19
10
MHz
t
PLH
, t
PHL
ns
t
PLH
, t
PHL
ns
t
PLH
, t
PHL
ns
t
TLH
, t
THL
ns
C
IN
pF
Typical @25°C,V
CC
=5.0 V
85
pF
C
PD
Used to determine the no-load dynamic power
consumption:
P
D
=C
PD
V
CC2
f+I
CC
V
CC
Rev. 00