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C1210 参数 Datasheet PDF下载

C1210图片预览
型号: C1210
PDF下载: 下载PDF文件 查看货源
内容描述: 流程C1210 CMOS 1.2毫米零门槛的设备 [Process C1210 CMOS 1.2mm Zero Threshold Devices]
分类和应用:
文件页数/大小: 4 页 / 37 K
品牌: IMP [ IMP, INC ]
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®
ISO 9001 Registered
Process C1210
CMOS 1.2µm
Zero Threshold Devices
Electrical Characteristics
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Zero Vt N-Channel Transis.
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Symbol
VT
N
γ
N
β
N
Leff
N
∆W
N
BVDSS
N
VTF
P(N)
Symbol
VT
ZLN
γ
ZLN
β
ZLN
I
DSATZN
Minimum
0.55
64
0.8
9
10
Minimum
0.00
75
28
Typical
0.15
0.348
90
34
Typical
0.75
0.34
75
1.0
0.6
T=25
o
C Unless otherwise noted
Maximum
Unit
Comments
0.95
V
100x1.2µm
1/2
V
100x1.2µm
2
86
µA/V
100x100µm
1.2
µm
100x1.2µm
µm
Per side
V
V
Maximum
0.30
105
40
Unit
V
V
1/2
µA/V
2
mA
Comments
100x100µm
100x100µm
100x100µm
100x1.5µm
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
P
γ
P
β
P
Leff
P
∆W
P
BVDSS
P
VTF
P(P)
Minimum
–0.7
21
0.9
–9.0
–10.0
Typical
–0.9
0.38
25
1.1
0.8
Maximum
–1.1
29
1.3
Unit
V
V
1/2
µA/V
2
µm
µm
V
V
Comments
100x1.2µm
100x1.2µm
100x100µm
100x1.2µm
Per side
Zero Vt P-Channel Transis.
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Symbol
VT
ZLP
γ
ZLP
β
ZLP
I
DSATZP
Minimum
–0.3
21
–11
Typical
–0.1
0.36
26
–15
Maximum
0.1
31
–19
Unit
V
V
1/2
µA/V
2
mA
Comments
100x100µm
100x100µm
100x100µm
100x1.5µm
© IMP, Inc.
47