®
ISO 9001 Registered
Process C1227
HV BiCMOS 1.2µm
30V Double Metal - Double Poly
Electrical Characteristics
Symbol
N-Channel High Voltage Transistor
Threshold Voltage
HVT
N
HVBVDSS
P
Punch Through Voltage
ON Resistance
HVPR
0N
Operating Voltage
N-Channel Low Voltage Transistor
Threshold Voltage
VT
N
Body Factor
γ
N
Conduction Factor
β
N
Effective Channel Length
Leff
N
Width Encroachment
∆W
N
Punch Through Voltage
BVDSS
N
Poly Field Threshold Voltage VTFP
N
Symbol
P-Channel High Voltage Transistor
Threshold Voltage
HVT
P
Punch Through Voltage
HVBVDSS
P
ON Resistance
HVPR
0N
P-Channel Low Voltage Transistor
Threshold Voltage
VT
P
Body Factor
γ
P
Conduction Factor
β
P
Effective Channel Length
Leff
P
Width Encroachment
∆W
P
Punch Through Voltage
BVDSS
P
Poly Field Threshold Voltage VTF
P(P)
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-2 to Metal-1
Vertical NPN Transistor
Beta
Early Voltage
Cut-Off Frequency
Symbol
C
OX
C
M1P
C
MM
Symbol
h
FE
V
A
f
τ
Minimum
0.7
36
Typical
0.9
1.4
V
GS
= 5V
V
DS
= 30V
0.4
0.50
64.0
1.20
8
10
Minimum
–0.7
–36
0.6
0.65
75.0
1.35
0.45
18
Typical
–0.9
11.0
Maximum
–1.1
0.8
0.80
86.0
1.50
T=25
o
C Unless otherwise noted
Maximum
Unit
Comments
1.1
V
V
mΩ-
cm
2
V
@V
GS
= 5V
V
DS
= 0.1V
V
V
1/2
µA/V
2
µm
µm
V
V
Unit
V
V
mΩ-
cm
2
V
V
1/2
µA/V
2
µm
µm
V
V
Unit
fF/µm
2
fF/µm
2
fF/µm
2
Unit
V
GHz
100x1.4µm
100x1.4µm
100x100µm
100x1.4µm
Per side
Comments
@V
GS
= –5V
@V
DS
= –0.1V
100x1.4µm
100x1.4µm
100x100µm
100x1.4µm
Per side
–0.8
0.35
20.0
1.35
–8
–10
Minimum
1.338
0.040
0.043
Minimum
50
–0.6
0.50
25.0
1.50
0.40
–18
Typical
1.439
0.046
0.050
Typical
140
34
1.89
–0.4
0.65
30.0
1.65
Maximum
1.569
0.052
0.057
Maximum
240
Comments
Comments
4.5x4.5µm
© IMP, Inc.
71
IMP [ IMP, INC ]
