®
ISO 9001 Registered
Process C3015
CMOS 3µm
Digital
Electrical Characteristics
T=25
o
C Unless otherwise noted
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
N
γ
N
β
N
Leff
N
∆W
N
BVDSS
N
VTF
P(N)
Minimum
0.6
42
2.85
12
12
Typical
0.8
0.6
47
3.2
0.7
Maximum
1.0
52
3.55
Unit
V
V
1/2
µA/V
2
µm
µm
V
V
Comments
100x3µm
100x3µm
100x100µm
100x3µm
Per side
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VT
P
γ
P
β
P
Leff
P
∆W
P
BVDSS
P
VTF
P(P)
Minimum
–0.6
13
2.85
–12
–12
Typical
–0.8
0.55
15
3.2
0.9
Maximum
–1.0
19
3.55
Unit
V
V
1/2
µA/V
2
µm
µm
V
V
Comments
100x3µm
100x3µm
100x100µm
100x3µm
Per side
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Gate Poly Sheet Resistance
Metal-1 Sheet Resistance
Passivation Thickness
Symbol
ρ
P-well(f)
ρ
N+
x
jN+
ρ
P+
x
jP+
T
GOX
ρ
POLY1
ρ
M1
T
PASS
Minimum
3.2
16
50
37.5
15
Typical
4.8
21
0.8
80
0.7
40.0
22
30
200+900
Maximum
6.5
27
100
42.5
30
60
Unit
KΩ/
Ω/
µm
Ω/
µm
nm
Ω/
mΩ/
nm
Comments
P-well
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly-1
Metal-1 to Silicon
Symbol
C
OX
C
M1P
C
M1S
Minimum
0.66
0.026
Typical
0.72
0.0523
0.030
Maximum
0.78
0.034
Unit
fF/µm
2
fF/µm
2
fF/µm
2
Comments
© IMP, Inc.
89
IMP [ IMP, INC ]
