150mA SOT-23 Ultra Low Noise CMOS RF-LDO™ Regulator
TYPICAL PERFORMANCE CHARACTERISTICS
Unless otherwise specified T
A
T=25°C, V
IN
=V
OUT(NOM)
, + 1V, ON/OFF pin tied to V
IN
Spectral Noise Density
10
V
OU T
= 2.8V
I
OU T
= 50mA
C
N OI SE
= 0.01µF
C
O UT
= 1µF (Ceramic)
0.1
C
O U T
= 2.2µF or 4.7µF (Ceramic)
0.01
C
O UT
= 10µF (Ceramic)
0.001
10
100
1K
10K
100K
1M
10M
0.001
10
100
1K
10K
100K
1M
0.01
I
O U T
= 1 mA
10
Spectral Noise Density
V
O UT
= 2.8V
C
O U T
= 2.2µF
C
N O ISE
= 0.01µF
Noise (µV/Rt Hz)
1
Noise (µV/Rt Hz)
1
I
O UT
= 50mA, 100mA or 150 mA
0.1
Frequency (Hz)
Frequency (Hz)
Output Noise Voltage vs. C
NOISE
90
80
70
C
N OI SE
= 1.2nF
5.6nF
V
O UT
= 3V
I
O UT
= 10mA
C
O U T
= 2.2µF
(Ceramic)
90
80
70
Output Noise Voltage vs. C
NOISE
C
N O ISE
= 1.2nF
V
O U T
= 3V
I
O U T
= 10mA
C
O UT
= 4.7µF
(Ceramic )
Noise (µVrms)
Noise (µVrms)
60
50
40
30
20
10
0
8.2nF
0.039µF
0.047µF
0.022µF
0.01µF
60
50
40
30
20
10
0
5.6nF
8.2nF
0.039µF
0.047µF
0.022µF
0.016µF
100 Hz–
50 KHz
100 Hz–
100 KHz
300 Hz–
50 KHz
300 Hz–
100 KHz
100 Hz–
50 KHz
100 Hz–
100 KHz
300 Hz–
50 KHz
300 Hz–
100 KHz
Freq Band
Ripple Rejection vs. Frequency
120
100
80
60
40
20
0
10
100
1K
10K
100K
1M
10M
C
O U T
= 1µF
C
OU T
= 2.2µF
80
V
O UT
= 3V
I
O UT
= 10mA
C
O U T
= 4.7µF
C
O U T
= 10µF
70
60
50
40
30
Freq Band
Ripple Rejection vs. Frequency
V
OU T
= 2.8V
I
OU T
= 150mA
C
O UT
= 4.7µF
Ripple Rejection (dB)
Ripple Rejection (dB)
C
O UT
= 2.2µF
C
O UT
= 1µF
20
10
0
10
100
1K
10K
100K
C
OU T
= 10µF
1M
Impala Linear Corporation
ILC7082 1.3
(408) 574-3939
www.impalalinear.com
April 1999
13
IMPALA [ Impala Linear Corporation ]
