11N60S5 PDF Datasheet浏览和下载

型号.:
11N60S5
PDF下载:
下载PDF文件
内容描述:
酷MOS ™功率晶体管
[Cool MOS⑩ Power Transistor]
文件大小:
335 K
文件页数:
12 Pages
品牌Logo:
品牌名称:
INFINEON [ INFINEON TECHNOLOGIES AG ]
PCB Prototype
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  • 批号
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SPP11N60S5, SPB11N60S5
SPI11N60S5
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO220-3-1
V
DS
R
DS(on)
I
D
P-TO262
P-TO263-3-2
600
0.38
11
V
A
P-TO220-3-1
2
1
23
Type
Package
Ordering Code
SPP11N60S5
SPB11N60S5
SPI11N60S5
Maximum Ratings
Parameter
P-TO220-3-1
P-TO263-3-2
P-TO262
Q67040-S4198
Q67040-S4199
Q67040-S4338
Marking
11N60S5
11N60S5
11N60S5
Symbol
I
D
Value
11
7
Unit
A
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
= 5.5 A,
V
DD
= 50 V
I
D puls
E
AS
22
340
0.6
11
±20
±
30
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
1)
E
AR
I
D
= 11 A,
V
DD
= 50 V
Avalanche current, repetitive
t
AR
limited by
T
jmax
I
AR
Gate source voltage
V
GS
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
A
V
W
°C
V
GS
P
tot
T
j ,
T
stg
125
-55... +150
Operating and storage temperature
Rev. 2.1
Page 1
2004-03-30