SPP11N60S5, SPB11N60S5
SPI11N60S5
Maximum Ratings
Parameter
Drain Source voltage slope
V
DS
= 480 V,
I
D
= 11 A,
T
j
= 125 °C
Symbol
dv/dt
Value
20
Unit
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics,
at
Tj=25°C
unless otherwise specified
Parameter
Symbol
Conditions
min.
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V,
I
D
=0.25mA
Drain-Source avalanche
V
(BR)DS
V
GS
=0V,
I
D
=11A
breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
GS(th)
I
DSS
I
D
=500
µΑ
,
V
GS
=V
DS
Symbol
min.
R
thJC
R
thJA
Values
typ.
-
-
-
35
-
max.
1
62
62
-
260
-
-
-
-
Unit
K/W
R
thJA
T
sold
-
°C
Values
typ.
-
700
4.5
-
-
-
0.34
0.92
29
max.
-
-
5.5
600
-
3.5
-
-
-
-
-
-
Unit
V
V
DS
=600V,
V
GS
=0V,
T
j
=25°C,
T
j
=150°C
µA
25
250
100
0.38
-
-
nA
Ω
Gate-source leakage current
I
GSS
V
GS
=20V,
V
DS
=0V
V
GS
=10V,
I
D
=7A,
T
j
=25°C
T
j
=150°C
Drain-source on-state resistance
R
DS(on)
Gate input resistance
R
G
f
=1MHz, open Drain
Rev. 2.1
Page 2
2004-03-30
INFINEON [ INFINEON TECHNOLOGIES AG ]
