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11N60S5 参数 Datasheet PDF下载

11N60S5图片预览
型号: 11N60S5
PDF下载: 下载PDF文件 查看货源
内容描述: 酷MOS ™功率晶体管 [Cool MOS⑩ Power Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 12 页 / 335 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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SPP11N60S5, SPB11N60S5
SPI11N60S5
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=I
S
V
R
=350V,
I
F
=I
S
,
di
F
/dt=100A/µs
Symbol
I
S
I
SM
Conditions
min.
T
C
=25°C
Values
typ.
-
-
1
650
7.9
max.
11
22
1.2
1105
-
-
-
-
-
-
Unit
A
V
ns
µC
Typical Transient Thermal Characteristics
Symbol
Thermal resistance
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
0.015
0.03
0.056
0.197
0.216
0.083
K/W
Value
typ.
Unit
Symbol
Value
typ.
Unit
Thermal capacitance
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
0.0001878
0.0007106
0.000988
0.002791
0.007285
0.063
Ws/K
T
j
P
tot
(t)
R
th1
R
th,n
T
case
E xternal H eatsink
C
th1
C
th2
C
th,n
T
am b
Rev. 2.1
Page 4
2004-03-30