4N39
PHOTO SCR OPTOCOUPLER
FEATURES
• Turn On Current (I
FT
), 5.0 mA Typical
• Gate Trigger Current (I
GT
), 20 mA
• Surge Anode Current, 10 Amp
• Blocking Voltage, 200 VAC
PK
• Gate Trigger Voltage (V
GT
), 0.6 Volt
• Isolation Voltage, 5300 VAC
RMS
• Solid State Reliability
• Standard DIP Package
• Underwriters Lab File #E52744
DESCRIPTION
The 4N39 is an optically coupled SCR with a Gal-
lium Arsenide infrared emitter and a silicon photo
SCR sensor. Switching can be achieved while
maintaining a high degree of isolation between
triggering and load circuits. The 4N39 can be used
in SCR triac and solid state relay applications
where high blocking voltages and low input current
sensitivity are required.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................6.0 V
Peak Forward Current
(100
µ
s, 1% Duty Cycle)............................. 1.0 A
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25
°
C..........................100 mW
Derate Linearly from 50
°
C .........................2 mW/
°
C
Detector
Reverse Gate Voltage .....................................6.0 V
Anode Peak Blocking Voltage .......................200 V
Peak Reverse Gate Voltage ...............................6 V
Anode Current ............................................ 300 mA
Surge Anode Current (100
µ
s duration) .......... 10 A
Surge Gate Current (5 ms duration)........... 100 mA
Power Dissipation, 25
°
C ambient ..............400 mW
Derate Linearly from 25
°
C .........................8 mW/
°
C
Package
Isolation Test Voltage (1 sec.) .......... 5300 VAC
RMS
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C ...............................
≥
10
12
Ω
V
IO
=500 V, T
A
=100
°
C .............................
≥
10
11
Ω
Total Package Dissipation ..........................450 mW
Derate Linearly from 50
°
C .........................9 mW/
°
C
Operating Temperature ................–55
°
C to +100
°
C
Storage Temperature....................–55
°
C to +150
°
C
Soldering Temperature (10 s.).......................260
°
C
Package Dimensions in Inches (mm)
Pin One ID.
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Anode 1
Cathode 2
NC 3
6 Gate
5 Anode
4 Cathode
.335 (8.50)
.343 (8.70)
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
18° typ.
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
Characteristics
(T
A
=25
°
C)
Sym-
bol
Emitter
Forward Voltage
Reverse Current
Detector
Forward Blocking
Voltage
Reverse Blocking
Voltage
Min.
Typ
.
1.2
Max
.
1.5
10
Unit
Condition
V
F
I
R
V
DM
V
RM
VTM
I
H
V
µ
A
V
V
I
F
=20 mA
V
R
=5 V
R
GK
=10 K
Ω
T
A
=100
°
C
Id=150
µ
A
200
200
1.2
200
0.6
1.0
On-state Voltage
Holding Current
Gate Trigger
Voltage
Forward Leakage
Current
V
µ
A
V
I
TM
=300 mA
R
GK
=27 K
Ω
V
FX
=50 V
V
FX
=100 V
R
GK
=27 K
Ω
R
L
=10 K
Ω
R
GK
=10 K
Ω
V
RX
=200 V
I
F
=0,
T
A
=100
°
C
R
GK
=27 K
Ω
V
RX
=200 V
I
F
=0,
T
A
=100
°
C
V
FX
=50 V
R
GK
=10 K
Ω
V
FX
=100 V
R
GK
=27 K
Ω
V
GT
I
DM
50
µ
A
Reverse Leakage
Current
I
RM
50
µ
A
Package
Turn-0n Current
I
FT
15
8
Isolation Capaci-
tance
5–36
30
14
mA
2
pF
f=1 MHz