FEATURES
• Isolation Test Voltage: 2500 VAC
RMS
• TTL Compatible
• High Bit Rates: 1 Mbit/s
• High Common-Mode Interference Immunity
• Bandwidth 2 MHz
• Open-Collector Output
• External Base Wiring Possible
• Field-Effect Stable by TRIOS*
• Underwriters Lab File #E52744
DESCRIPTION
The 6N135 and 6N136 are optocouplers with a
GaAIAs infrared emitting diode, optically coupled
with an integrated photodetector which consists of
a photodiode and a high-speed transistor in a DIP-
8 plastic package.
Signals can be transmitted between two electri-
cally separated circuits up to frequencies of 2
MHz. The potential difference between the circuits
to be coupled is not allowed to exceed the maxi-
mum permissible reference voltages.
Maximum Ratings
Emitter
Reverse Voltage .................................................5 V
Forward Current ............................................25 mA
Peak Forward Current
(t =1 ms, duty cycle 50%) ............................50 mA
Maximum Surge Forward Current
(t
≤1 µs,
300 pulses/s).......................................1 A
Thermal Resistance................................... 700 K/W
Total Power Dissipation (T
A
≤70°C)
...............45 mW
Detector
Supply Voltage ..................................... –0.5 to 15 V
Output Voltage .................................... –0.5 to 15 V
Emitter-Base Voltage ......................................... 5 V
Output Current.................................................8 mA
Maximum Output Current ..............................16 mA
Base Current .................................................. 5 mA
Thermal Resistance................................... 300 K/W
Total Power Dissipation (T
A
≤70°C)
.............100 mW
Package
Isolation Test Voltage (between emitter and
detector climate per DIN 40046,
part 2, Nov. 74 (t=1min.) ............... 2500 VAC
RMS
Pollution Degree (DIN VDE 0109) ......................... 2
Creepage
...........................................................≥7
mm
Clearance
...........................................................≥7
mm
Comparative Tracking Index per
DIN IEC112/VDE 0303 part 1,
Group IIIa per DIN VDE 6110 ........................ 175
Isolation Resistance
V
IO
=500 V, T
A
= 25°C ...............................
≥10
12
Ω
V
IO
=500 V, T
A
= 100°C .............................
≥10
11
Ω
Storage Temperature Range ....... –55°C to +125°C
Ambient Temperature Range ...... –55°C to +100°C
Soldering Temperature (max.
≤10
sec.,
dip soldering
≥0.5
mm from
case bottom).............................................. 260°C
*TRIOS—TRansparent IOn Shield
6N135
6N136
HIGH-SPEED 2.5 kV TRIOS®
OPTOCOUPLER
Dimensions in inches (mm)
4
3
2
1
Pin
One
I.D.
NC
1
2
3
4
8
7
6
5
Cathode
(V
CC
)
Base
(V
B
)
Collector
(V
O
)
Emitter
(GND)
.268 (6.81)
.255 (6.48)
Anode
Cathode
NC
5
6
7
8
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
.305 typ.
(7.75) typ.
.135 (3.43)
.115 (2.92)
4°
Typ.
.022 (.56)
.018 (.46)
.100 (2.54)
Typ.
.040 (1.02)
.030 (.76 )
3°–9°
10°
Typ.
.012 (.30)
.008 (.20)
Characteristics
(T
A
=0 to 70°C unless otherwise specified, T
A
=25°C typ.)
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Temperature Coeffi-
cient, Forward Voltage
Detector
Supply Current
Logic Low
Supply Current
Logic High
Output Voltage,
Output Low
6N135
6N136
Output Current,
Output High
Output Current,
Output High
Current Gain
Package
Coupling Capacitance
Input-Output
Current Transfer Ratio
6N135
6N136
6N135
6N136
5–1
CTR
CTR
CTR
CTR
16 (≥7)
35 (≥19)
≥5
≥15
%
%
%
I
F
=16 mA, V
O
=0.4 V,
V
CC
=4.5 V, T
A
=25°C
I
F
=16 mA, V
O
=0.5 V,
V
CC
=4.5 V
C
IO
0.6
pF
f=1 MHz
I
CCL
I
CCH
150
0.01 (≤1)
µA
µA
I
F
=16 mA, V
O
open,
V
CC
=15 V
I
F
=0 mA, V
O
open,
V
CC
=15 V
I
F
=16 mA,
V
CC
=4.5 V
I
O
=1.1 mA
I
O
=2.4 mA
I
F
=0 mA,
V
O
=V
CC
=5.5 V
I
F
=0 mA
V
O
=V
CC
=15 V
V
O
=5 V, I
O
=3 mA
Symbol
V
F
V
BR
I
R
C
O
∆V
F
/∆T
A
1.6 (≤1.9)
≥5
0.5 (≤10)
125
-1.7
Unit
V
V
µA
pF
mV/°C
Condition
I
F
=16 mA
I
R
=10
µA
V
R
=5 V
V
R
=0 V, f=1 MHz
I
F
=16 mA
V
OL
V
OL
I
CH
0.1 (≤0.4)
0.1 (≤0.4)
3 (≤500)
V
V
nA
I
CH
H
FE
0.01 (≤1)
150
µA
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