BAS116...
Silicon Low Leakage Diode
•
Low-leakage applications
•
Medium speed switching times
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
BAS116
!
Type
BAS116
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Package
SOT23
Configuration
single
Symbol
V
R
V
RM
I
F
I
FSM
4.5
0.5
P
tot
T
j
T
stg
370
150
-65 ... 150
Value
80
85
250
Marking
JVs
Unit
V
mA
A
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Non-repetitive peak surge forward current
t
= 1 µs
t
=1s
Total power dissipation
T
S
≤
54°C
Junction temperature
Storage temperature
mW
°C
Thermal Resistance
Parameter
Junction - soldering point
2)
BAS116
1
Pb-containing
Symbol
R
thJS
Value
≤
260
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19
INFINEON [ INFINEON TECHNOLOGIES AG ]
