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BC639 参数 Datasheet PDF下载

BC639图片预览
型号: BC639
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管自动对焦(高电流增益高集电极电流) [NPN Silicon AF Transistors (High current gain High collector current)]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 130 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BC 635
… BC 639
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
1)
Junction - case
2)
R
th JA
R
th JC
156
75
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
T
j
T
stg
Values
BC 635
45
45
Unit
BC 637
60
60
5
1
1.5
100
200
0.8 (1)
150
– 65 … + 150
W
˚C
mA
A
BC 639
80
100
V
Total power dissipation,
T
C
= 90 ˚C
1)
P
tot
K/W
1)
2)
If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm
×
10 mm large copper area
for the collector terminal,
R
th JA
= 125 K/W and thus
P
tot max
= 1 W at
T
A
= 25 ˚C.
Mounted on Al heat sink 15 mm
×
25 mm
×
0.5 mm.
Semiconductor Group
2