BC817W, BC818W
NPN Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807W, BC808W (PNP)
3
2
1
VSO05561
Type
BC817-16W
BC817-25W
BC817-40W
BC818-16W
BC818-25W
BC818-40W
Maximum Ratings
Parameter
Marking
6As
6Bs
6Cs
6Es
6Fs
6Gs
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
Package
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
Symbol
V
CEO
V
CBO
V
EBO
BC817W
45
50
5
500
1
100
200
250
150
BC818W
25
30
5
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation
,
T
S
= 130 °C
Junction temperature
Storage temperature
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
mA
A
mA
mW
°C
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
80
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Nov-29-2001
INFINEON [ INFINEON TECHNOLOGIES AG ]
