BC846S
NPN Silicon AF Transistor Array
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Two ( galvanic) internal isolated Transistors
with good matching in one package
4
5
6
2
1
C1
6
B2
5
E2
4
3
VPS05604
TR2
TR1
1
E1
2
B1
3
C2
EHA07178
Type
BC846S
Maximum Ratings
Parameter
Marking
1Ds
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
Value
65
80
80
6
100
200
250
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation,
T
S
= 115 °C
Junction temperature
Storage temperature
mA
mW
°C
Thermal Resistance
Junction - soldering point
1)
R
thJS
140
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Nov-29-2001
INFINEON [ INFINEON TECHNOLOGIES AG ]
