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BCP55 参数 Datasheet PDF下载

BCP55图片预览
型号: BCP55
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管自动对焦 [NPN Silicon AF Transistors]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 5 页 / 50 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BCP54...BCP56
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
V
(BR)CEO
typ.
max.
Unit
V
45
60
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
20
-
nA
µA
-
BCP54
BCP55
BCP56
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
V
(BR)CBO
BCP54
BCP55
BCP56
45
60
100
V
(BR)EBO
I
CBO
I
CBO
h
FE
h
FE
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
DC current gain 1)
I
C
= 5 mA,
V
CE
= 2 V
DC current gain 1)
I
C
= 150 mA,
V
CE
= 2 V
5
-
-
25
BCP54...56
hFE-grp.10
hFE-grp.16
40
63
100
h
FE
V
CEsat
V
BE(ON)
-
100
160
-
-
-
250
160
250
-
0.5
1
V
DC current gain 1)
I
C
= 500 mA,
V
CE
= 2 V
Collector-emitter saturation voltage1)
I
C
= 500 mA,
I
B
= 50 mA
Base-emitter voltage 1)
I
C
= 500 mA,
V
CE
= 2 V
25
-
-
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 100 MHz
1) Pulse test: t
≤=300µs,
D = 2%
f
T
-
100
-
MHz
3
Nov-29-2001