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BCP56-10 参数 Datasheet PDF下载

BCP56-10图片预览
型号: BCP56-10
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管自动对焦 [NPN Silicon AF Transistors]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 7 页 / 526 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BCP54...-BCP56...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0 , BCP54...
I
C
= 10 mA,
I
B
= 0 , BCP55...
I
C
= 10 mA,
I
B
= 0 , BCP56-10, -16
V
(BR)CEO
Symbol
min.
Values
typ.
max.
Unit
V
45
60
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
-
-
-
-
-
-
100
160
-
-
-
0.1
20
-
25
40
63
100
25
-
250
160
250
-
0.5
1
V
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0 , BCP54...
I
C
= 100 µA,
I
E
= 0 , BCP55...
I
C
= 100 µA,
I
E
= 0 , BCP56-10, -16
V
(BR)CBO
45
60
100
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
5
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
DC current gain
1)
I
C
= 5 mA,
V
CE
= 2 V
I
C
= 150 mA,
V
CE
= 2 V, BCP54/BCP55
I
C
= 150 mA,
V
CE
= 2 V, BCP56-10
I
C
= 150 mA,
V
CE
= 2 V, BCP54-16...BCP56-16
I
C
= 500 mA,
V
CE
= 2 V
h
FE
Collector-emitter saturation voltage
1)
I
C
= 500 mA,
I
B
= 50 mA
V
CEsat
V
BE(ON)
-
-
Base-emitter voltage
1)
I
C
= 500 mA,
V
CE
= 2 V
AC Characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 10 V,
f
= 100 MHz
1
Pulse
f
T
-
100
-
MHz
test: t < 300µs; D < 2%
3
2008-10-10