BCV26, BCV46
PNP Silicon Darlington Transistors
•
For general AF applications
•
High collector current
•
High current gain
•
Complementary types: BCV27, BCV47 (NPN)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
Type
BCV26
BCV46
Maximum Ratings
Parameter
Collector-emitter voltage
BCV26
BCV46
Collector-base voltage
BCV26
BCV46
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
S
≤
74 °C
Junction temperature
Storage temperature
1
Pb-containing
Marking
FDs
FEs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
Package
SOT23
SOT23
Symbol
V
CEO
Value
30
60
Unit
V
V
CBO
40
80
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
10
500
800
100
200
360
150
-65 ... 150
mW
°C
mA
package may be available upon special request
1
2007-04-20
INFINEON [ INFINEON TECHNOLOGIES AG ]
