BCV27, BCV47
NPN Silicon Darlington Transistors
For general AF applications
High collector current
High current gain
Complementary types: BCV26, BCV46 (PNP)
3
Type
BCV27
BCV47
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
= 74 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS
2
1
VPS05161
Marking
FFs
FGs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
Package
SOT23
SOT23
Symbol
V
CEO
V
CBO
V
EBO
BCV27
30
40
10
BCV47
60
80
10
Unit
V
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
500
800
100
200
360
150
-65 ... 150
mA
mA
mW
°C
210
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Jul-12-2001
INFINEON [ INFINEON TECHNOLOGIES AG ]
