BCV62
PNP Silicon Double Transistor
•
To be used as a current mirror
•
Good thermal coupling and
V
BE
matching
•
High current gain
•
Low collector-emitter saturation voltage
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
C1 (2)
C2 (1)
3
2
4
1
Tr.1
Tr.2
E1 (3)
E2 (4)
EHA00013
Type
BCV62A
BCV62B
BCV62C
Marking
3Js
3Ks
3Ls
1 = C2
1 = C2
1 = C2
Pin Configuration
2 = C1
2 = C1
2 = C1
3 = E1
3 = E1
3 = E1
4 = E2
4 = E2
4 = E2
Package
SOT143
SOT143
SOT143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
DC collector current
Peak collector current
Base peak current (transistor T1)
Total power dissipation,
T
S
= 99 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
2)
1
Pb-containing
Symbol
V
CEO
V
CBO
V
EBS
I
C
I
CM
I
BM
P
tot
T
j
T
stg
Value
30
30
6
100
200
200
300
150
-65 ... 150
Unit
V
mA
mW
°C
R
thJS
≤
170
K/W
package may be available upon special request
2007-04-20
2For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
INFINEON [ INFINEON TECHNOLOGIES AG ]
