BF998...
Silicon N_Channel MOSFET Tetrode
•
Short-channel transistor
with high S / C quality factor
•
For low-noise, gain-controlled
input stage up to 1 GHz
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BF998
BF998R
BF998W
SOT143
SOT143R
SOT343
1=S
1=D
1=D
2=D
2=S
2=S
3=G2
3=G1
3=G1
4=G1
4=G2
4=G2
-
-
-
-
-
-
MOs
MRs
MR
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Total power dissipation
T
S
≤
76 °C, BF998, BF998R
T
S
≤
94 °C, BF998W
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1)
BF998, BF998R
BF998W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Symbol
V
DS
I
D
±I
G1/2SM
P
tot
Value
12
30
10
200
200
Unit
V
mA
T
stg
T
ch
Symbol
R
thchs
-55 ... 150
150
°C
Value
≤
370
≤
280
Unit
K/W
1
Feb-13-2004
INFINEON [ INFINEON TECHNOLOGIES AG ]
