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BFP420E6327 参数 Datasheet PDF下载

BFP420E6327图片预览
型号: BFP420E6327
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管RF [NPN Silicon RF Transistor]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
文件页数/大小: 9 页 / 542 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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BFP420
NPN Silicon RF Transistor
For high gain low noise amplifiers
For oscillators up to 10 GHz
Noise figure
F
= 1.1 dB at 1.8 GHz
outstanding
G
ms
= 21 dB at 1.8 GHz
Transition frequency
f
T
= 25 GHz
Gold metallization for high reliability
SIEGET
25 GHz f
T
- Line
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
3
4
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFP420
Maximum Ratings
Parameter
Marking
AMs
1=B
Pin Configuration
2=E
3=C
4=E
Symbol
V
CEO
4.5
4.1
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
15
15
1.5
35
3
160
150
Package
-
SOT343
Value
Unit
V
-
Collector-emitter voltage
T
A
> 0 °C
T
A
0 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
2)
T
S
107 °C
Junction temperature
Ambient temperature
Storage temperature
1
Pb-containing
mA
mW
°C
-65 ... 150
-65 ... 150
package may be available upon special request
2
T
is measured on the collector lead at the soldering point to the pcb
S
2009-12-02
1