BFP420
NPN Silicon RF Transistor
•
For high gain low noise amplifiers
•
For oscillators up to 10 GHz
•
Noise figure
F
= 1.1 dB at 1.8 GHz
outstanding
G
ms
= 21 dB at 1.8 GHz
•
Transition frequency
f
T
= 25 GHz
•
Gold metallization for high reliability
•
SIEGET
25 GHz f
T
- Line
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
4
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFP420
Maximum Ratings
Parameter
Marking
AMs
1=B
Pin Configuration
2=E
3=C
4=E
Symbol
V
CEO
4.5
4.1
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
15
15
1.5
35
3
160
150
Package
-
SOT343
Value
Unit
V
-
Collector-emitter voltage
T
A
> 0 °C
T
A
≤
0 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
2)
T
S
≤
107 °C
Junction temperature
Ambient temperature
Storage temperature
1
Pb-containing
mA
mW
°C
-65 ... 150
-65 ... 150
package may be available upon special request
2
T
is measured on the collector lead at the soldering point to the pcb
S
2009-12-02
1