BFS17W
NPN Silicon RF Transistor
•
For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFS17W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Marking
MCs
Pin Configuration
1=B
2=E
3=C
Package
SOT323
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Value
15
25
2.5
25
50
280
150
-65 ... 150
-65 ... 150
Value
≤
205
Unit
V
mA
mW
°C
Peak collector current,
f
= 10 MHz
Total power dissipation
2)
T
S
≤
93 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
3)
1
Pb-containing
3
For
Unit
K/W
package may be available upon special request
2
T
is measured on the collector lead at the soldering point to the pcb
S
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-03-30
INFINEON [ INFINEON TECHNOLOGIES AG ]
