BSM 100 GB 120 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 100 GB 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
V
CE
I
C
Package
HALF-BRIDGE 2
Ordering Code
C67076-A2107-A70
1200V 150A
Symbol
Values
1200
1200
Unit
V
V
CE
V
CGR
V
GE
I
C
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
± 20
A
150
100
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
I
Cpuls
300
200
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
P
tot
800
W
+ 150
-55 ... + 150
≤
0.16
≤
0.3
2500
20
11
F
55 / 150 / 56
-
Vac
mm
K/W
°C
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
Semiconductor Group
1
Mar-29-1996
INFINEON [ INFINEON TECHNOLOGIES AG ]
