Rev. 1.0
BSP125
SIPMOS
®
Power-Transistor
Feature
•
N-Channel
•
Enhancement mode
•
Logic Level
•
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
600
45
0.12
SOT-223
V
Ω
A
Type
BSP125
Package
SOT-223
Ordering Code
Q62702-S654
Tape and Reel Information
E6327: 3000 pcs/reel
Marking
BSP125
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T
A
=25°C
T
A
=70°C
Value
0.12
0.1
Unit
A
I
D
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
T
j ,
T
stg
0.48
6
±20
Class 1
1.8
-55... +150
55/150/56
W
°C
kV/µs
V
Reverse diode dv/dt
I
S
=0.12A,
V
DS
=480V, di/dt=200A/µs,
T
jmax
=175°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Power dissipation
T
A
=25°C,
T
A
=25
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2003-02-26
INFINEON [ INFINEON TECHNOLOGIES AG ]
