SIPMOS
®
Small-Signal Transistor
BSP 129
q
q
q
q
q
q
q
V
DS
240 V
I
D
0.2 A
R
DS(on)
20
Ω
N channel
Depletion mode
High dynamic resistance
Available grouped in
V
GS(th)
Type
Ordering
Code
Tape and Reel Information Pin Configuration Marking Package
1
G
2
D
3
S
4
D
BSP 129 SOT-223
BSP 129 Q67000-S073 E6327: 1000 pcs/reel
BSP 129 Q67000-S314 E7941: 1000 pcs/reel
V
GS(th)
selected in groups:
(see
page 212)
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
R
GS
= 20 kΩ
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current,
T
A
= 34 ˚C
Pulsed drain current,
Max. power dissipation,
Symbol
Values
240
240
±
14
±
20
0.2
0.6
1.7
– 55 … + 150
72
12
E
55/150/56
Unit
V
V
DS
V
DGR
V
GS
V
gs
I
D
I
D puls
P
tot
T
j
,
T
stg
R
thJA
R
thJS
–
–
A
W
˚C
K/W
–
T
A
= 25 ˚C
T
A
= 25 ˚C
Operating and storage temperature range
Thermal resistance
1)
chip-ambient
chip-soldering point
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
1)
Transistor on epoxy pcb 40 mm
×
40 mm
×
1.5 mm with 6 cm
2
copper area for drain connection.
Semiconductor Group
1
09.96
INFINEON [ INFINEON TECHNOLOGIES AG ]
