BSP60-BSP62
PNP Silicon Darlington Transistor
•
High collector current
•
Low collector-emitter saturation voltage
•
Complementary types: BSP50...BSP52 (NPN)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
4
2
1
3
Type
BSP60
BSP61
BSP62
Maximum Ratings
Parameter
Marking
BSP60
BSP61
BSP62
1=B
1=B
1=B
2=C
2=C
2=C
Pin Configuration
3=E
3=E
3=E
4=C
4=C
4=C
-
-
-
-
-
-
Package
SOT223
SOT223
SOT223
Symbol
V
CEO
Value
45
60
80
Unit
V
Collector-emitter voltage
BSP60
BSP61
BSP62
Collector-base voltage
BSP60
BSP61
BSP62
Emitter-base voltage
Collector current
Peak collector current
Base current
Total power dissipation-
T
S
≤
124 °C
Junction temperature
Storage temperature
1
Pb-containing
V
CBO
60
80
90
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stg
5
1
2
100
1.5
150
-65 ... 150
mA
W
°C
A
package may be available upon special request
1
2007-04-26
INFINEON [ INFINEON TECHNOLOGIES AG ]
