Rev. 1.41
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0,
I
F
=
I
S
V
R
=120V,
I
F=
l
S
,
di
F
/dt=100A/µs
BSS87
Values
min.
typ.
0.33
77.5
11.2
5.8
3.7
3.5
17.6
27.3
max.
-
97
14
7.3
5.5
5.2
26.4
41
ns
S
pF
Unit
Symbol
Conditions
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
gs
Q
gd
Q
g
V
DS
³2*I
D
*R
DS(on)max
,
I
D
=0.21A
V
GS
=0,
V
DS
=25V,
f=1MHz
0.16
-
-
-
-
-
-
-
V
DD
=120V,
V
GS
=10V,
I
D
=0.28A,
R
G
=6W
V
DD
=192V,
I
D
=0.26A
-
-
-
-
0.14
1.7
3.7
2.7
0.21
2.5
5.5
-
nC
V
DD
=192V,
I
D
=0.26A,
V
GS
=0 to 10V
V
(plateau)
V
DD
=192V,
I
D
= 0.26 A
I
S
V
T
A
=25°C
-
-
-
-
-
-
-
0.82
53.6
101
0.26
1.04
1.2
80.4
152
A
V
ns
nC
Page 3
2010-01-27
INFINEON [ INFINEON TECHNOLOGIES AG ]
