BUZ 11 A
Not for new design
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 11 A
V
DS
50 V
I
D
26 A
R
DS(on)
0.055
Ω
Package
TO-220 AB
Ordering Code
C67078-S1301-A3
Maximum Ratings
Parameter
Continuous drain current
Symbol
Values
26
Unit
A
I
D
I
Dpuls
104
T
C
= 25 °C
Pulsed drain current
T
C
= 25 °C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
AR
E
AR
E
AS
30
1.9
mJ
I
D
= 30 A,
V
DD
= 25 V,
R
GS
= 25
Ω
L
= 15.6 µH,
T
j
= 25 °C
Gate source voltage
Power dissipation
14
V
GS
P
tot
±
20
75
V
W
T
C
= 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
≤
1.67
≤
75
E
55 / 150 / 56
°C
K/W
Semiconductor Group
07/96
INFINEON [ INFINEON TECHNOLOGIES AG ]
