SIPMOS
®
Power Transistor
BUZ 32
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on
)
Package
Ordering Code
BUZ 32
200 V
9.5 A
0.4
Ω
TO-220 AB
C67078-S1310-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
I
D
9.5
A
T
C
= 29 ˚C
Pulsed drain current
I
Dpuls
38
T
C
= 25 ˚C
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
AR
E
AR
E
AS
9.5
6.5
mJ
I
D
= 9.5 A,
V
DD
= 50 V,
R
GS
= 25
Ω
L
= 2 mH,
T
j
= 25 ˚C
Gate source voltage
Power dissipation
120
V
GS
P
tot
±
20
75
V
W
T
C
= 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
˚C
≤
1.67
75
E
55 / 150 / 56
K/W
Data Sheet
1
05.99
INFINEON [ INFINEON TECHNOLOGIES AG ]
