BUZ 73A
Drain-source on-resistance
R
DS (on)
=
ƒ
(T
j
)
parameter:
I
D
= 4.5 A,
V
GS
= 10 V
1.9
Gate threshold voltage
V
GS (th)
=
ƒ
(T
j
)
parameter:
V
GS
=
V
DS
,
I
D
= 1 mA
4.6
V
4.0
Ω
1.6
98%
R
DS (on)
1.4
V
GS(th)
3.6
3.2
typ
1.2
1.0
0.8
0.6
2.8
2.4
2%
98%
typ
2.0
1.6
1.2
0.4
0.2
0.0
-60
0.8
0.4
0.0
-60
-20
20
60
100
˚C
160
-20
20
60
100
˚C
160
T
j
T
j
Typ. capacitances
C
=
f
(V
DS
)
parameter:V
GS
= 0V,
f
= 1MHz
10
1
Forward characteristics of reverse diode
I
F
=
ƒ
(V
SD
)
parameter:
T
j
, t
p
= 80 µs
10
2
nF
C
A
I
F
10
0
10
1
C
iss
10
-1
C
oss
C
rss
10
0
T
j
= 25 ˚C typ
T
j
= 150 ˚C typ
T
j
= 25 ˚C (98%)
T
j
= 150 ˚C (98%)
10
-2
0
5
10
15
20
25
30
V
V
DS
40
10
-1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
Data Sheet
7
05.99