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IKW15T120 参数 Datasheet PDF下载

IKW15T120图片预览
型号: IKW15T120
PDF下载: 下载PDF文件 查看货源
内容描述: 低损耗DUOPACK : IGBT的沟槽场终止和技术,软,恢复快反平行EMCON何二极管 [LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE]
分类和应用: 二极管瞄准线双极性晶体管快速恢复二极管
文件页数/大小: 15 页 / 452 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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IKW15T120
^
TrenchStop Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
Approx. 1.0V reduced V
CE(sat)
and 0.5V reduced V
F
compared to BUP313D
Short circuit withstand time – 10µs
G
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models :
V
CE
1200V
I
C
15A
V
CE(sat),Tj=25°C
1.7V
T
j,max
150°C
E
P-TO-247-3-1
(TO-247AC)
Type
IKW15T120
Package
TO-247AC
Ordering Code
Q67040-S4516
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
1200V,
T
j
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T
j
T
stg
-
-40...+150
-55...+150
260
°C
1)
Symbol
V
CE
I
C
Value
1200
30
15
Unit
V
A
I
Cpul s
-
I
F
45
45
30
15
I
Fpul s
V
GE
t
SC
P
tot
45
±20
10
110
V
µs
W
V
GE
= 15V,
V
CC
1200V,
T
j
150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Preliminary / Rev. 1 Jul-02
Power Semiconductors