TrenchStop
®
Series
IKP20N60T
IKW20N60T
Low Loss DuoPack : IGBT in
TrenchStop
®
and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
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•
•
•
•
Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop
®
and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V
CE(sat)
PG-TO-220-3-1
Positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
600V
600V
I
C
20A
20A
V
CE(sat),Tj=25°C
1.5V
1.5V
T
j,max
175°C
175°C
Marking
K20T60
K20T60
Package
PG-TO-220-3-1
PG-TO-247-3
C
G
E
PG-TO-247-3
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•
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Type
IKP20N60T
IKW20N60T
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (V
CE
≤
600V,
T
j
≤
175°C)
Diode forward current, limited by
T
jmax
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150°C
Power dissipation
T
C
= 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1
2)
Symbol
V
CE
I
C
Value
600
40
20
Unit
V
A
I
Cpuls
-
I
F
I
Fpuls
V
GE
t
SC
P
tot
T
j
T
stg
-
60
60
40
20
60
±20
5
166
-40...+175
-55...+175
260
V
µs
W
°C
T
C
= 25°C
T
C
= 100°C
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.5 Sep. 08
Power Semiconductors
INFINEON [ INFINEON TECHNOLOGIES AG ]
