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IKW40N120T2 参数 Datasheet PDF下载

IKW40N120T2图片预览
型号: IKW40N120T2
PDF下载: 下载PDF文件 查看货源
内容描述: IGBT在第二代TRENCHSTOP &章;用柔软,快速恢复反并联二极管EMCON [IGBT in 2nd generation TrenchStop®with soft, fast recovery anti-parallel EmCon diode]
分类和应用: 二极管双极性晶体管
文件页数/大小: 15 页 / 881 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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TrenchStop
2 Generation Series
®
nd
IKW40N120T2
Low Loss DuoPack :
IGBT in 2
nd
generation
TrenchStop
®
with soft, fast recovery anti-parallel EmCon diode
C
Best in class TO247
Short circuit withstand time – 10µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop
®
2
nd
generation for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Easy paralleling capability due to positive temperature coefficient in
V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
V
CE
1200V
I
C
40A
V
CE(sat),Tj=25°C
1.75V
T
j,max
175°C
Marking Code
K40T1202
Package
PG-TO-247-3-21
G
E
PG-TO-247-3-21
Type
IKW40N120T2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current (T
j
=150°C)
T
C
= 25°C
T
C
= 110°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
1200V,
T
j
175°C
DC Diode forward current (T
j
=150°C)
T
C
= 25°C
T
C
= 110°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
3)
V
GE
= 15V,
V
CC
600V,
T
j,start
175°C
Power dissipation
T
C
= 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T
j
T
stg
-
-40...+175
-55...+150
260
°C
P
tot
480
W
I
Fpuls
V
GE
t
SC
I
F
75
2
40
160
±20
10
V
µs
I
Cpuls
-
Symbol
V
CE
I
C
75
2
Value
1200
Unit
V
A
40
160
160
Wavesoldering only, temperature on leads only
1
2
J-STD-020 and JESD-022
Limited by bond wire
3)
Allowed number of short circuits:
<1000; time between short circuits: >1s.
1
Rev. 2.0
Oct 06
Power Semiconductors