TrenchStop Series
IKW75N60T
q
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
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Very low V
CE(sat)
1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Positive temperature coefficient in V
CE(sat)
very tight parameter distribution
high ruggedness, temperature stable behaviour
very high switching speed
Low EMI
Very soft, fast recovery anti-parallel EmCon HE diode
1)
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
G
E
PG-TO-247-3-21
Applications:
•
Frequency Converters
•
Uninterrupted Power Supply
Type
IKW75N60T
V
CE
600V
I
C
75A
V
CE(sat),Tj=25°C
1.5V
T
j,max
175°C
Marking
K75T60
Package
PG-TO-247-3-21
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area (V
CE
≤
600V,
T
j
≤
175°C)
Diode forward current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
3)
Symbol
V
CE
I
C
Value
600
80
2)
Unit
V
A
75
I
Cpul s
-
I
F
80
I
Fpul s
V
GE
t
SC
P
tot
T
j
T
stg
-
2)
225
225
75
225
±20
5
428
-40...+175
-55...+175
260
V
µs
W
°C
V
GE
= 15V,
V
CC
≤
400V,
T
j
≤
150°C
Power dissipation
T
C
= 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1)
2)
J-STD-020 and JESD-022
Value limited by bondwire
3)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 May 06
INFINEON [ INFINEON TECHNOLOGIES AG ]
