IL205AT/206AT/207AT/
208AT
FEATURES
•
High Current Transfer Ratio, I
F
=10mA,
V
CE
=5 V
IL205AT, 40 – 80%
IL206AT, 63 –125%
IL207AT, 100 – 200%
IL208AT, 160 – 320%
High BV
CEO
, 70 V
Isolation Voltage, 2500 VAC
RMS
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
Underwriters Lab File #E52744
(Code Letter P)
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
Package Dimensions in Inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
.004 (.10)
.008 (.20)
.050 (1.27)
typ.
.021 (.53)
Anode 1
.154±.005 Cathode 2
C
L (3.91±.13)
NC 3
NC 4
.016 (.41)
.015±.002
(.38±.05)
.008 (.20)
40°
8
7
6
5
NC
Base
Collector
Emitter
•
•
•
•
•
•
•
7°
.058±.005
(1.49±.13)
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015
(.04)
max.
5° max.
R.010
(.25) max.
.020±.004
(.15±.10)
2 plcs.
TOLERANCE:
±.005
(unless otherwise noted)
DESCRIPTION
The IL205AT/206AT/207AT/208AT are optically
coupled pairs with a Gallium Arsenide infrared LED
and a silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL205/6/7/8
come in a standard SOIC-8 small outline package
for surface mounting which makes them ideally
suited for high density applications with limited
space. In addition to eliminating through-holes
requirements, this package conforms to standards
for surface mounted devices.
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the
adjacent circuits. The high BV
CEO
of 70 volts gives
a higher safety margin compared to the industry
standard 30 volts.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................... 6.0 V
Continuous Forward Current .......................... 60 mA
Power Dissipation at 25°C ............................. 90 mW
Derate Linearly from 25°C ....................... 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ................ 70 V
Emitter-Collector Breakdown Voltage .................. 7 V
Collector-Base Breakdown Voltage ................... 70 V
Power Dissipation ........................................ 150 mW
Derate Linearly from 25°C ....................... 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ...................................... 240 mW
Derate Linearly from 25°C ....................... 3.3 mW/°C
Storage Temperature ..................... –55°C to +150°C
Operating Temperature ................. –55°C to +100°C
Soldering Time at 260°C ............................... 10 sec.
Semiconductor Group
Characteristics
(T
A
=25°C)
Symbol Min. Typ.
Max. Unit
Condition
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Emitter
Dark Current
Collector-Emitter
Capacitance
Package
DC Current Transfer
IL205AT
IL206AT
IL207AT
IL208AT
DC Current Transfer
IL205AT
IL206AT
IL207AT
IL208AT
Collector-Emitter
Saturation Voltage
Isolation Test Voltage
Equivalent DC
Isolation Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
V
F
I
R
C
O
BV
CEO
70
BV
ECO
7
I
CEOdark
C
CE
CTR
DC
40
63
100
160
CTR
DC
13
22
34
56
V
CE sat
V
IO
2500
3535
C
IO
R
IO
t
ON
,
t
OFF
1.3
0.1
25
1.5
100
V
µA
pF
V
V
I
F
=10 mA
V
R
=6.0 V
V
R
=0
I
C
=100
µA
I
E
=100
µA
V
CE
=10 V,
I
F
=0
V
CE
=0
I
F
=10 mA,
V
CE
=5 V
10
5
10
50
nA
pF
%
80
125
200
320
%
25
40
60
95
0.4
VAC
RMS
VDC
0.5
100
3.0
pF
GΩ
µs
I
C
=2 mA,
R
E
=100
Ω,
V
CE
=10 V
I
C
=2.0 mA,
I
F
=10 mA
I
F
=1 mA,
V
CE
=5 V
Specifications subject to change.
4–1
10.95