IL211AT/IL212AT/IL213AT
FEATURES
N
EW
•
High Current Transfer Ratio
IL211AT—20% Minimum
IL212AT—50% Minimum
IL213AT—100% Minimum
Isolation Voltage, 2500 VAC
RMS
Electrical Specifications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
Underwriters Lab File #E52744
(Code Letter P)
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
Package Dimensions in Inches (mm)
•
•
•
•
•
•
•
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
.004 (.10)
.008 (.20)
Anode 1
.154±.005 Cathode 2
C
L (3.91±.13)
NC 3
NC 4
.016 (.41)
.015±.002
(.38±.05)
.008 (.20)
.050 (1.27)
typ.
.021 (.53)
40°
8
7
6
5
NC
Base
Collector
Emitter
7°
.058±.005
(1.49±.13)
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015
(.04)
max.
5° max.
R.010
(.25) max.
.020±.004
(.15±.10)
2 plcs.
TOLERANCE:
±.005
(unless otherwise noted)
Characteristics
(T
A
=25°C)
DESCRIPTION
The IL211AT/212AT/213AT are optically coupled
pairs with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the device
while maintaining a high degree of electrical isolation
between input and output. The IL211AT//212AT/
213AT comes in a standard SOIC-8 small outline
package for surface mounting which makes it ideally
suited for high density applications with limited space.
In addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A choice of 20, 50, and 100% minimum CTR at
I
F
=10 mA makes these optocouplers suitable for a
variety of different applications.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................... 6.0 V
Continuous Forward Current .......................... 60 mA
Power Dissipation at 25°C ............................. 90 mW
Derate Linearly from 25°C ....................... 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ................ 30 V
Emitter-Collector Breakdown Voltage .................. 7 V
Collector-Base Breakdown Voltage ................... 70 V
Power Dissipation ........................................ 150 mW
Derate Linearly from 25°C ....................... 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ...................................... 280 mW
Derate Linearly from 25°C ....................... 3.3 mW/°C
Storage Temperature ..................... –55°C to +150°C
Operating Temperature ................. –55°C to +100°C
Soldering Time at 260°C ............................... 10 sec.
Semiconductor Group
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Symbol Min. Typ.
V
F
I
R
C
O
BV
CEO
BV
ECO
1.3
0.1
25
30
7
5
10
Max. Unit
1.5
100
V
µA
pF
V
V
50
nA
pF
%
Condition
I
F
=10 mA
V
R
=6.0 V
V
R
=0
I
C
=10
µA
I
E
=10
µA
V
CE
=10 V,
I
F
=0
V
CE
=0
I
F
=10 mA
V
CE
=5 V
Collector-Emitter
Dark Current
I
CEOdark
Collector-Emitter
Capacitance
C
CE
Package
DC Current Transfer CTR
DC
IL211AT
20 50
IL212AT
50 80
IL213AT
100 130
Collector-Emitter
Saturation Voltage V
CE sat
Isolation Test
Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
0.4
I
F
=10 mA,
I
C
=2.0 mA
VAC
RMS
V
IO
C
IO
2500
0.5
100
3.0
pF
GΩ
µs
R
IO
t
ON
, t
OFF
I
C
=2 mA,
R
E
=100
Ω,
V
CE
=10 V
Specifications subject to change.
4–4
10.95
INFINEON [ INFINEON TECHNOLOGIES AG ]
