IL215AT/216AT/217AT
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
Package Dimensions in Inches (mm)
•
High Current Transfer Ratio, I
F
=1 mA
IL215AT, 20% Minimum
IL216AT, 50% Minimum
IL217AT, 100% Minimum
Isolation Voltage, 2500 VAC
RMS
Electrical Specifications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
Underwriters Lab File #E52744
(Code Letter P)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
.004 (.10)
.008 (.20)
.050 (1.27)
typ.
.021 (.53)
Anode 1
.154±.005 Cathode 2
C
L (3.91±.13)
NC 3
NC 4
.016 (.41)
.015±.002
(.38±.05)
.008 (.20)
40°
8
7
6
5
NC
Base
Collector
Emitter
•
•
•
•
•
•
•
7°
.058±.005
(1.49±.13)
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015
(.04)
max.
5° max.
R.010
(.25) max.
.020±.004
(.15±.10)
2 plcs.
TOLERANCE:
±.005
(unless otherwise noted)
DESCRIPTION
The IL215AT/216AT/217AT is an optically coupled
pair with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL215AT/
216AT/217AT comes in a standard SOIC-8 small
outline package for surface mounting which makes
it ideally suited for high density applications with
limited space. In addition to eliminating through-
holes requirements, this package conforms to
standards for surface mounted devices.
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Maximum Ratings
Emitter
Peak Reverse Voltage ............................................ 6.0 V
Continuous Forward Current ............................... 60 mA
Power Dissipation at 25°C .................................. 90 mW
Derate Linearly from 25°C ............................ 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ..................... 30 V
Emitter-Collector Breakdown Voltage ....................... 7 V
Collector-Base Breakdown Voltage ........................ 70 V
Power Dissipation ............................................. 150 mW
Derate Linearly from 25°C ............................ 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ........................................... 280 mW
Derate Linearly from 25°C ............................ 3.3 mW/°C
Storage Temperature .......................... –55°C to +150°C
Operating Temperature ...................... –55°C to +100°C
Soldering Time at 260°C .................................... 10 sec.
Characteristics
(T
A
=25°C)
Symbol Min. Typ.
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Emitter
Dark Current
Collector-Emitter
Capacitance
Package
DC Current Transfer
IL215AT
IL216AT
IL217AT
Collector-Emitter
Saturation Voltage
Isolation Test
Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
V
F
I
R
C
O
1.0
0.1
25
Max. Unit
1.5
100
V
µA
pF
Condition
I
F
=1 mA
V
R
=6.0 V
V
R
=0
I
C
=10
µA
I
E
=10
µA
V
CE
=10 V,
I
F
=0
V
CE
=0
I
F
=1 mA
V
CE
=5 V
BV
CEO
BV
ECO
I
CEOdark
C
CE
CTR
DC
30
7
5
10
50
V
V
nA
pF
%
20
50
100
V
CE sat
V
IO
C
IO
R
IO
t
ON
,
t
OFF
2500
50
80
130
0.4
VAC
RMS
0.5
100
3.0
pF
GΩ
µs
I
C
=0.1 mA,
I
F
=1 mA
I
C
=2 mA,
R
E
=100
Ω,
V
CE
=10 V
Specifications subject to change.
Semiconductor Group
4–7
10.95
INFINEON [ INFINEON TECHNOLOGIES AG ]
