Characteristics
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Thermal Resistance, Junction to Lead
Detector
Capacitance
Leakage Current, Collector-Emitter
Saturation Voltage, Collector-Emitter
DC Forward Current Gain
Saturated DC Forward Current Gain
Thermal Resistance, Junction to Lead
C
CE
I
CEO
V
CESAT
HFE
HFE
SAT
R
THJL
200
120
6.8
5
0.25
650
400
500
50
0.4
1800
600
°
C/W
pF
nA
V
CE
=5 V, f=1 MHz
V
CE
=10 V
I
CE
=1 mA, I
B
=20
µ
A
V
CE
= 10 V, I
B
=20
µ
A
V
CE
= 0.4 V, I
B
=20
µ
A
V
F
I
R
C
0
R
THJL
1.25
0.01
25
750
1.65
10
V
µ
A
pF
°
C/W
I
F
=60 mA
V
R
=6 V
V
R
=0 V, f=1 MHz
Min.
Typ.
Max.
Unit
Condition
Package Transfer Characteristics (Each Channel)
Symbol
ILD/Q1
Saturated Current Transfer Ratio (Collector-Emitter)
Current Transfer Ratio (Collector-Emitter)
ILD/Q2
Saturated Current Transfer Ratio (Collector-Emitter)
Current Transfer Ratio (Collector-Emitter)
ILD/Q5
Saturated Current Transfer Ratio (Collector-Emitter)
Current Transfer Ratio (Collector-Emitter)
Isolation and Insulation
Common Mode Rejection, Output High
Common Mode Rejection, Output Low
Common Mode Coupling Capacitance
Package Capacitance
C
MH
C
ML
C
CM
C
IO
5000
5000
0.01
0.8
V/
µ
s
V/
µ
s
pF
pF
V
IO
=0 V, f=1 MHz
V
CM
=50 V
P-P
, R
L
=1 k
Ω
, I
F
=0 mA
V
CM
=50 V
P-P
, R
L
=1 k
Ω
, I
F
=10 mA
CTR
CESAT
CTR
CE
50
100
130
400
%
%
I
F
=10 mA, V
CE
=0.4 V
I
F
=10 mA, V
CE
=10 V
CTR
CESAT
CTR
CE
100
170
200
500
%
%
I
F
=10 mA, V
CE
=0.4 V
I
F
=10 mA, V
CE
=10 V
CTR
CESAT
CTR
CE
20
75
90
300
%
%
I
F
=10 mA, V
CE
=0.4 V
I
F
=10 mA, V
CE
=10 V
Min.
Typ.
Max.
Unit
Condition
ILD/Q1/2/5
5–2
INFINEON [ INFINEON TECHNOLOGIES AG ]
