IPD06N03LA G
IPS06N03LA G
IPF06N03LA G
IPU06N03LA G
OptiMOS
®
2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC for target application
• N-channel, logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
1)
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
25
5.7
50
V
mΩ
A
Type
IPD06N03LA
IPF06N03LA
IPS06N03LA
IPU06N03LA
Package
Marking
P-TO252-3-11
06N03LA
P-TO252-3-23
06N03LA
P-TO251-3-11
06N03LA
P-TO251-3-1
06N03LA
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
2)
T
C
=100 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
4)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
T
C
=25 °C
3)
I
D
=45 A,
R
GS
=25
Ω
I
D
=50 A,
V
DS
=20 V,
di /dt =200 A/µs,
T
j,max
=175 °C
Value
50
50
350
225
6
±20
83
-55 ... 175
55/175/56
mJ
kV/µs
V
W
°C
Unit
A
Rev. 2.0
page 1
2006-05-11
INFINEON [ INFINEON TECHNOLOGIES AG ]
