IPW60R045CP
CoolMOS
®
Power Transistor
Features
• Worldwide best
R
ds,on
in TO247
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V
DS
@ T
jmax
R
DS(on),max
Q
g,typ
650
0.045
150
V
Ω
nC
PG-TO247-3-1
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
IPW60R045CP
Package
PG-TO247-3-1
Ordering Code
SP000067149
Marking
6R045
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
t
AR2),3)
Avalanche current, repetitive
t
AR2),3)
MOSFET dv /dt ruggedness
Gate source voltage
I
D,pulse
E
AS
E
AR
I
AR
dv /dt
V
GS
V
DS
=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
Mounting torque
Rev. 2.2
P
tot
T
j
,
T
stg
M3 and M3.5 screws
page 1
T
C
=25 °C
T
C
=25 °C
I
D
=11 A,
V
DD
=50 V
I
D
=11 A,
V
DD
=50 V
Value
60
38
230
1950
3
11
50
±20
±30
431
-55 ... 150
60
W
°C
Ncm
2008-01-21
A
V/ns
V
mJ
Unit
A
Please note the new package dimensions arccording to PCN 2009-134-A
INFINEON [ INFINEON TECHNOLOGIES AG ]
