MCT5210
MCT5211
AlGaAs LED/ Phototransistor
Optocoupler
FEATURES
• Current Transfer Ratio
MCT5210, >70% at I
F
=3.0 mA
MCT5211, >110% at I
F
=1.0 mA
• Saturation CTR–MCT5211, >100% at I
F
=1.6 mA
• High Isolation Voltage, 5300 VAC
RMS
• Underwriters Lab File #E52744
• VDE #0884 Available with Option 1
DESCRIPTION
The MCT5210/5211 are optocouplers with a high effi-
ciency AlGaAs LED optically coupled to a NPN pho-
totransistor. The high performance LED makes
operation at low input currents practical. The coupler
is housed in a double molded, six pin DIP package.
Isolation test voltage is 5300 VAC
RMS
.
Because these parts have guaranteed CTRs at one
and three mA, they are ideally suitable for interfacing
from CMOS to TTL or LSTTL to TTL. They are also
ideal for telecommunications applications such as
ring or off-hook detection.
Maximum Ratings
Emitter
Peak Reverse Voltage ............................................ 6 V
Continuous Forward Current .............................40 mA
Power Dissipation at 25°C................................. 75 mW
Derate Linearly from 25°C .......................... 1.0 mW/°C
Detector
Collector-Emitter Breakdown Voltage.................... 30 V
Emitter-Collector Breakdown Voltage...................... 7 V
Collector-Base Breakdown Voltage....................... 70 V
Power Dissipation............................................ 200 mW
Derate Linearly from 25°C .......................... 2.6 mW/°C
Package
Isolation Test Voltage..............................5300 VAC
RMS
Total Package Dissipation
at 25°C Ambient (LED + Detector) .............. 260 mW
Derate Linearly from 25°C .......................... 3.5 mW/°C
Leakage Path ............................................. 7 mm min.
Clearance Path............................................ 7 mm min.
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1 ........................... 175
Isolation Resistance
V
IO
=500 V, T
A
=25°C ....................................
≥10
12
Ω
V
IO
=500 V, T
A
=100°C ..................................
≥10
11
Ω
Operating Temperature ..................... –55°C to +100°C
Storage Temperature......................... –55°C to +150°C
Dimensions in inches (mm)
pin one ID
3
.248 (6.30)
.256 (6.50)
2
1
Anode 1
Cathode 2
4
5
6
6
5
4
.300 (7.62)
typ.
Base
Collector
Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
.048 (1.22)
.052 (1.32)
NC 3
.130 (3.30)
.138 (3.50)
18°
.031 (.080) min.
.031 (.80)
.035 (.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.30)
Electrical Characteristics
(25°C)
Parameter
Emitter
Forward Voltage
Reverse Voltage
Detector
HFE
BV
CEO
BV
ECO
BV
CBO
I
CEO
Package
(0–70°C)
Saturated Current Transfer Ratio
MCT5210
MCT5211
MCT5211
MCT5210
MCT5211
MCT5211
MCT5210
MCT5211
MCT5211
Saturation Voltage
MCT5210
MCT5211
Symbol
V
F
V
R
Min.
Typ.
1.2
Max. Unit
1.5
V
V
Condition
I
F
=5 mA
I
R
=10
µA
V
CE
=5 V
I
C
=100
µA
6
100
30
7
70
5
100
200
V
V
V
nA
I
C
=100
µA
I
E
=100
µA
I
E
=10
µA
V
CE
=10 V
V
CE
=0.4 V
CTR
CEsat
CTR
CEsat
CTR
CEsat
CTR
CTR
CTR
CTR
CB
CTR
CB
CTR
CB
V
CEsat
V
CEsat
60
100
75
70
150
110
0.2
0.3
0.25
120
200
150
150
300
225
0.4
0.6
0.5
0.25
0.25
%
%
%
%
%
%
%
%
%
0.4
0.4
I
F
=3.0 mA
I
F
=1.6 mA
I
F
=1.0 mA
V
CE
=5.0 V
I
F
=3.0 mA
I
F
=1.6 mA
I
F
=1.0 mA
V
CE
=4.3 V
I
F
=3.0 mA
I
F
=1.6 mA
I
F
=1.0 mA
I
F
=3.0 mA
I
C
=1.8 mA
I
F
=1.6 mA
I
C
=1.6 mA
Current Transfer Ratio
Collector-Base Current Transfer Ratio
V
V
1
INFINEON [ INFINEON TECHNOLOGIES AG ]
