SMBT2907A/MMBT2907A
PNP Silicon Switching Transistor
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary type:
SMBT2222A/ MMBT2222A (NPN)
3
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
1
VPS05161
Type
Marking
SMBT2907A/MMBT2907A s2F
1=B
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Total power dissipation,
T
S
= 77 °C
Junction temperature
Storage temperature
Pin Configuration
2=E
3=C
Package
SOT23
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
j
T
stg
Value
60
60
5
600
330
150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction - soldering point
1)
R
thJS
220
K/W
1
Jun-12-2002
INFINEON [ INFINEON TECHNOLOGIES AG ]
