SMBT2222A/MMBT2222A
NPN Silicon Switching Transistor
•
Low collector-emitter saturation voltage
•
Complementary type: SMBT2907AW (PNP)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
Type
Marking
SMBT2222A/MMBT2222A s1P
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T
S
≤
77 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
Pb-containing
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
j
T
stg
Symbol
R
thJS
Value
40
75
6
600
330
150
-65 ... 150
Value
≤
220
Unit
V
mA
mW
°C
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19
INFINEON [ INFINEON TECHNOLOGIES AG ]
