SMBTA14/MMBTA14
NPN Silicon Darlington Transistor
•
High collector current
•
Low collector-emitter saturation voltage
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
Type
SMBTA14/MMBTA14
Marking
s1N
1=B
Pin Configuration
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
S
≤
81 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
Pb-containing
Symbol
V
CES
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Symbol
R
thJS
Value
30
30
10
300
500
100
200
330
150
-65 ... 150
Value
≤
210
Unit
V
mA
mW
°C
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19
INFINEON [ INFINEON TECHNOLOGIES AG ]
