EW
MOC8111
PHOTOTRANSISTOR
NO BASE CONNECTION OPTOCOUPLER
Package Dimensions in inches (mm)
Pin One ID.
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Anode 1
Cathode 2
NC 3
6 Base
5 Collector
4 Emitter
FEATURES
• Current Transfer Ratio 20% Min.
• No Base Terminal Connection for Improved
Common Mode Interface Immunity
• Field-Effect Stable by TRIOS (TRansparent
IOn Shield)
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Underwriters Lab File #E52744
V
•
VDE 0884 Available with Option 1
D E
N
.335 (8.50)
.343 (8.70)
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
18° typ.
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
DESCRIPTION
The MOC8111 is an optocoupler consisting of a
Gallium Arsenide infrared emitting diode opti-
cally coupled to a silicon planar phototransistor
detector in a plastic plug-in DIP 6 pin package.
The coupling device is suitable for signal trans-
mission between two electrically separated cir-
cuits. The potential difference between the
circuits to be coupled is not allowed to exceed
the maximum permissible reference voltages.
In contrast to the IL1 the base terminal is not con-
nected, resulting in a substantially improved com-
mon-mode interference immunity.
Maximum Ratings
(T
A
=25
°
C)
Emitter
Reverse Voltage .............................................. 6 V
DC Forward Current ................................... 60 mA
Surge Forward Current (t
≤
10
µ
s) .................. 2.5 A
Total Power Dissipation............................ 100 mW
Detector
Collector-Emitter Breakdown Voltage ............ 30 V
Collector Current ....................................... 50 mA
Collector Current (t
≤
1 ms) ........................ 150 mA
Total Power Dissipation............................ 150 mW
Package
Isolation Test Voltage between
Emitter and Detector, Refer to
Standard Climate 23/50
DIN 50014 ....................................5300 VAC
RMS
Creepage ...................................................
≥
7 mm
Clearance ...................................................
≥
7 mm
Isolation Thickness between
Emitter and Detector ............................
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part 1 ..............175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C.................................10
12
Ω
V
IO
=500 V, T
A
=100
°
C...............................10
11
Ω
Storage Temperature Range ..... –55
°
C to +150
°
C
Ambient Temperature Range..... –55
°
C to +100
°
C
Soldering Temperature (max. 10 s,
dip soldering distance to
seating plane
≥
1.5 mm) ...........................260
°
C
Electrical Characteristics
(T
A
=25
°
C)
Parameter
Emitter
Forward Voltage
Reverse Leakage
Current
Capacitance
Detector
Collector-Emitter
Breakdown
Voltage
Collector-Emitter
Leakage Current
Emitter-Collector
Breakdown
Voltage
Collector-Emitter
Capacitance
Package
Collector Satura-
tion Voltage
Output Collector
Current
Turn On Time
Turn Off Time
V
CESAT
I
C
2
0.15
5
7.5
5.7
20
20
0.4
V
mA
µ
s
µ
s
I
C
=500
µ
A
I
F
=10 mA
I
F
=10 mA
V
CE
=10 V
V
CC
=10 V
R
L
=100
Ω
,
I
C
=2 mA,
see Figure 1
BV
CEO
I
CEO
V
ECO
7
30
1
50
V
nA
V
I
C
=1
µ
A
V
CE
=10 V
I
E
=10
µ
A
V
F
I
R
C
J
1.15
0.05
25
1.5
10
V
µ
A
pF
I
F
=10 mA
V
R
=6 V
V=0, f=1 MHz
Symbol Min.
Typ.
Max. Unit
Condition
C
CE
7
pF
V
CE
=0 V, f=1 MHz
T
ON
T
OFF
5–221
INFINEON [ INFINEON TECHNOLOGIES AG ]
